The Phase Characteristics of the Models of the GaAs Gyroelectric Waveguides with Temperature Sensitive Anisotropic Dielectric Layers. In Case of the One Layer
Abstract
Models of open cylindrical multilayer gyroelectric-anisotropic-gyroelectric waveguides are presented in this paper. The influence of density of free carriers, temperature and the presence of the external dielectric layer to the waves phase characteristics of the models of the n-GaAs waveguides is evaluated. Differential Maxwell’s equations, coupled mode and partial area methods were used to obtain complex dispersion equation of models of gyroelectric-anisotropic-gyroelectric waveguides with or without temperature sensitive external anisotropic dielectric. The analysis has showed that the phase characteristics are practically unchanged when the density of electrons is equal to N = (1017 –5·1018) m–3, d/rs = 0, the changes of waves phase coefficients are obtained in the models of the waveguides with external anisotropic dielectric layer. The highest differences of waves phase coefficient are obtained when the density of electrons is N = 1021 m–3. The external dielectric layer improves the control of gyroelectric n-GaAs waveguides with temperature.
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Developed by Institute of Industrial Electronics and Electrical Engineering of RIGA TECHNICAL UNIVERSITY