Switch-Off Behaviour of 6.5 kV IGBT Modules in Two-Level Voltage Source Inverter

Authors

  • Andrei Blinov Tallinn University of Technology
  • Tanel Jalakas Tallinn University of Technology
  • Dmitri Vinnikov Tallinn University of Technology
  • Kuno Janson Tallinn University of Technology

DOI:

https://doi.org/10.2478/v10144-010-0033-z

Keywords:

pulse width modulated power converters, insulated gate bipolar transistor, freewheeling state, oscillations

Abstract

This paper presents an analysis of the switch-off process of 6.5 kV/200 A IGBT modules in a two-level half-bridge voltage source inverter. During experiments, it was stated that real switching process is far from ideal switch-off since parasitic inductance and capacitance in the circuit cause voltage spikes and high frequency oscillations during transition processes. Operation states of the inverter are described and analyzed. Experimental and simulation results are compared, the main transients are analyzed and mathematically expressed and possible problems and solutions are discussed.

References

Jalakas, T.; Vinnikov, D.; Laugis, J., "Development of 50-kW Isolated DC/DC Converter with High-Voltage IGBTs," Compatibility in Power Electronics, 2007. CPE '07, pp. 1-6, May 29, 2007 - June 1, 2007, Poland.

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Vinnikov, D; Egorov, M; Strzelecki, R; "Evaluative Analysis of 2- and 3-level DC/DC Converters for High-Voltage High-Power Applications", pp. 1-6; Tallinn University of Technology (Tallinn, Estonia), Gdynia Maritime University (Gdynia, Poland).

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Published

2010-01-01

How to Cite

Blinov, A., Jalakas, T., Vinnikov, D., & Janson, K. (2010). Switch-Off Behaviour of 6.5 kV IGBT Modules in Two-Level Voltage Source Inverter. Electrical, Control and Communication Engineering, 27(1), 122-127. https://doi.org/10.2478/v10144-010-0033-z